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BUW13F Folha de dados(PDF) 5 Page - NXP Semiconductors |
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BUW13F Folha de dados(HTML) 5 Page - NXP Semiconductors |
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5 / 16 page ![]() 1997 Aug 13 5 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF Note 1. Measured with a half-sinewave voltage (curve tracer). tf fall time BUW13F ICon = 10 A; IB =2A; VCL = 250 V; Tc = 100 °C − 200 300 ns BUW13AF ICon = 8 A; IB = 1.6 A; VCL = 300 V; Tc = 100 °C − 200 300 ns SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Fig.2 Power derating curve. handbook, halfpage 050 Th ( oC) 100 150 120 0 40 80 MGK674 Ptot max (%) Fig.3 Reverse bias SOAR. Tc ≤ 100 °C; VBE = −1to −5V. handbook, halfpage 20 0 400 IC (A) 1200 VCE (V) 0 MGB896 800 10 BUW13F BUW13AF |
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