12N50C datasheet(2/10 Pages) VISHAY

2 / 10 page

www.vishay.com

Document Number: 91388

S10-0969-Rev. B, 26-Apr-10

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Note

• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to

produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell

such products.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TO220-AB D2PAK (TO-263)

TO-220 FULLPAK

UNIT

Maximum Junction-to-Ambient

RthJA

°C/W

Maximum Junction-to-Case (Drain)

RthJC

0.6

3.5

Junction-to-Ambient (PCB mount)a

RthJA

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.6

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

3.0

5.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4 A

0.46

0.555

Forward Transconductance

gfs

VDS = 50 V, ID = 3 A

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz

1375

Output Capacitance

Coss

165

Reverse Transfer Capacitance

Crss

-17

Total Gate Charge

VGS = 10 V

ID = 10 A, VDS = 400 V

-32

Gate-Source Charge

Qgs

-12

Gate-Drain Charge

Qgd

-15

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 10 A

Rg = 4.3 Ω, VGS = 10 V

-18

Rise Time

-35

Turn-Off Delay Time

td(off)

-23

Fall Time

-6

Gate Input Resistance

f = 1 MHz, open drain

1.1

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Current

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 10 A, VGS = 0 V

1.8

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,

VR = 20 V

580

Body Diode Reverse Recovery Charge

Qrr

-4.3

μC

Body Diode Reverse Recovery Current

IRRM

-13

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