12N50C datasheet(7/10 Pages) VISHAY

7 / 10 page

Document Number: 91388

www.vishay.com

S10-0969-Rev. B, 26-Apr-10

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

Fig. 15 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91388.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode

forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 V*

VDD

ISD

Driver gate drive

D.U.T. ISD waveform

D.U.T. VDS waveform

Inductor current

D =

P.W.

Period

* VGS = 5 V for logic level devices

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

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