12N50C datasheet(4/10 Pages) VISHAY

4 / 10 page

www.vishay.com

Document Number: 91388

S10-0969-Rev. B, 26-Apr-10

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area (TO-220AB, D2PAK)

Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)

VDS, Drain-to-Source Voltage (V)

100

1000

2400

2000

1600

1200

800

400

oss

iss

GS = 0 V, f = 1MHz

iss = Cgs +Cgd Cds SHORTED

rss = Cgd

oss = Cds + Cgd

rss

QG, Total Gate Charge (nC)

102030405060

DS = 400 V

DS = 250 V

DS = 100 V

D = 12 A

0.1

100

VSD, Source-to-Drain Voltage (V)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

J = 150 °C

J = 25 °C

GS = 0 V

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

C = 25 °C

J = 150 °C

Single Pulse

100 µs

1 ms

10 ms

OPERATION IN THIS AREA

LIMITED BY R

DS(on)

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

C = 25 °C

J = 150 °C

Single Pulse

100 µs

1 ms

10 ms

OPERATION IN THIS AREA

LIMITED BY R

DS(on)

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