FTK830P datasheet(2/8 Pages) FS

2 / 8 page

MOSFET

ABSOLUTE MAXIMUM RATINGS

(Ta = 25˚C, unless otherwise specified)

PARAMET

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

(TJ = 25˚C ~ 125˚C)

500

VDS

Drain to Gate Voltage (RGS = 20kΩ) (TJ =25˚C ~ 125˚C)

VDGR

500

Gate to Source Voltage

IGS

±30

Continuous

5.0

Drain Current

Ta = 100°C

3.0

IDM

EAS

Maximum Power Dissipation

(Ta = 25˚C)

Derating above 25˚C

0.6

W/˚C

Single Pulse Avalanche Energy Rating

(VDD=50V, starting TJ =25˚C, L=25mH, RG=25Ω, peak IAS = 4.5A)

290

Note: 1. Signified recommend operating range that indicates conditions for which the device is intended to be

functional, but does not guarantee specific performance limits.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

UNIT

62.5

Thermal Resistance Junction-Ambient

θJA

1.67

Thermal Resistance Junction-Case

θJc

˚C / W

ELECTRICAL CHARACTERISTICS

(TC = 25˚C , unless Otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

UNIT

500

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

VDS = VGS, ID = 250µA

4.0

Gate to Threshold Voltage

VGS(TH)

VDS > ID(ON) X RDS(ON)MAX, VGS = 10V

On-State Drain Current (Note 1)

ID(ON)

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

Gate to Source Leakage Current

IGSS

VGS = ±20V

2.5

Drain to Source On Resistance

(Note 2)

RDS(ON)

ID = 3.0A, VGS = 10V

Ω

Forward Transconductance

(Note 2)

4.2

Turn-On Delay Time

tDLY(ON)

Rise Time

VDD = 250V, ID ≈ 2.5A,

RGS = 25Ω, RL = 54Ω

(Note 2)

2007. 12. 18

2/8

FTK830P / F

Revision No : 0

TSTG

-55 ~ +150

˚C

MAX

Storage Temperature

Turn-Off Delay Time

tDLY(OFF)

VGS = 10V, ID = 5A,

VDS = 0.8 X Rated BVDSS

IG(REF) = 1.5mA (Note 3)

Fall Time

Gate to Source Charge

QGS

Gate to Drain “Miller” Charge

QGD

VDS = 25V, VGS = 0V,f = 1.0MHz

Total Gate Charge

Input Capacitance

CISS

700

QG(TOT)

RATINGS

gFS

VDS ≥ 10V, ID = 2.7A

1.15

100

+150

˚C

Junction Temperature

Pulsed

Output Capacitance

Reverse - Transfer Capacitance

COSS

CRSS

VDS = 0.8 x Rated BVDSS,

VGS = 0V, TJ = 125˚C

2.0

4.5

±100

1.5

110

900

210

120

Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.

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