1.Gate

3.Source

2.Drain

MOSFET

TO-220

1

1

TO-220F

5A, 500V, 1.5

Ω,

N-CHANNEL POWER MOSFET

DESCRIPTION

The N-Channel enhancement mode silicon gate power MOSFET

is designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

FEATURES

=1.5Ω

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

SYMBOL

ORDERING INFORMATION

Order Number

Pin Assignment

Package

1

2

3

Packing

FTK830P

TO-220

G

D

S

Tube

FTK830F

TO-220F

G

D

S

Tube

Note: Pin Assignment:

G: Gate

D: Drain

S: Source

2007. 12. 18

1/8

SEMICONDUCTOR

TECHNICAL DATA

FTK830P / F

Revision No : 0

P :

F :

* Single Pulse Avalanche Energy Rated

* Linear Transfer Characteristics

* High Input Impedance