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STM32WB55CC Folha de dados(PDF) 125 Page - STMicroelectronics |
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STM32WB55CC Folha de dados(HTML) 125 Page - STMicroelectronics |
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125 / 165 page ![]() DS11929 Rev 3 125/165 STM32WB55xx Electrical characteristics 152 Figure 23. Recommended NRST pin protection 1. The reset network protects the device against parasitic resets. 2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 71: NRST pin characteristics. Otherwise the reset will not be taken into account by the device. 3. The external capacitor on NRST must be placed as close as possible to the device. Table 71. NRST pin characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit VIL(NRST) NRST input low level voltage - - - 0.3 x VDD V VIH(NRST) NRST input high level voltage - 0.7 x VDD -- Vhys(NRST) NRST Schmitt trigger voltage hysteresis -- 200 - mV RPU Weak pull-up equivalent resistor(2) 2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is minimal (~10% order) . VIN = VSS 25 40 55 kΩ VF(NRST) NRST input filtered pulse -- - 70 ns VNF(NRST) NRST input not filtered pulse 1.71 V ≤ VDD ≤ 3.6 V 350 - - |
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