STM32WB55CC datasheet(99/165 Pages) STMICROELECTRONICS

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Table 45. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C

IDD

(Shutdown)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

disabled

1.8 V 0.039 0.013 0.030 0.100 0.635

1.950

5.45

TBD

µA

2.4 V 0.059 0.014 0.055 0.120 0.785

2.350

6.50

TBD

0.059

3.0 V 0.064 0.037 0.070 0.180 1.000

2.900

8.00

TBD

3.6 V 0.071 0.093 0.140 0.280 1.300

3.700

9.75

TBD

IDD

(Shutdown

with RTC)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

enabled

RTC clocked

by LSE

quartz (2) in

low drive

mode

1.8 V 0.320 0.315 0.355 0.420 0.985

2.300

TBD

2.4 V 0.425 0.405 0.460 0.540 1.200

2.800

TBD

3.0 V 0.535 0.535 0.595 0.700 1.500

3.450

TBD

3.6 V 0.695 0.720 0.790 0.940 2.000

4.350

TBD

IDD

(wakeup

from

Shutdown)

Supply current

during wakeup

from Shutdown

mode

Wakeup clock

MSI = 4 MHz.

See (3).

3.0 V

TBD

---

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 49: Low-power mode wakeup timings.

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