STTH1002CT datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

STTH1002C

4/8

t(ns)

100

1000

dI /dt(A/µs)

I =5A

V =160V

T =25°C

T =125°C

Fig. 6: Reverse recovery time versus dIF/dt

(typical values, per diode).

I(A)

100

1000

dI /dt(A/µs)

I =5A

V =160V

T =25°C

T =125°C

Fig. 7: Peak reverse recovery current versus dIF/dt

(typical values, per diode).

IRM

Qrr

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

150

T (°C)

rr I

[T ]/Q ;I

[T =125°C]

rr RM

I =5A

V =160V

Fig. 8:

Dynamic parameters versus junction

temperature.

100

(°C/W)

th(j-a)

S(Cu)(cm²)

Fig. 9-2: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, eCU: 35µm) for DPAK.

02468

S(Cu)(cm²)

(°C/W)

th(j-a)

Fig. 9-1: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, eCU: 35µm) for D

2PAK.

Q (nC)

100

120

140

160

180

200

220

240

100

1000

dI /dt(A/µs)

I =5A

V =160V

T =25°C

T =125°C

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

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