STTH1002CT datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

STTH1002C

3/8

I (A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

δ=tp/T

P = 10W

P = 5W

P = 2W

Fig. 1: Peak current versus duty cycle (per diode).

100

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

(V)

(A)

T =25°C

T =150°C

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

Z/R

th(j-c)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t(s)

Fig. 3-1: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AB,

2PAK, D2PAK, DPAK).

100

150

200

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

(A)

100

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

T =150°C

T =25°C

(V)

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

Z/R

th(j-c)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t(s)

Fig. 3-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration

(TO-220FPAB).

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