STTH1002CT datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STTH1002C

2/8

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

current

Tj = 25°C

VR =VRRM

5µA

Tj = 125°C

340

VF**

Forward voltage drop

Tj = 25°C

IF =5 A

1.1

Tj = 25°C

IF =10 A

1.25

Tj = 150°C

IF =5 A

0.78

0.89

Tj = 150°C

IF =10 A

1.05

Pulse test: * tp = 5ms,

δ <2%

** tp = 380µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

P = 0.73 x IF(AV) + 0.032 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse

recovery time

Tj = 25°C

IF =1A VR = 30V

dIF/dt = 100 A/µs

IRM

Reverse

recovery current

Tj = 125°C

IF =5A VR = 160V

dIF/dt = 200 A/µs

5.9

7.6

tfr

Forward

recovery time

Tj = 25°C

IF =5A dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

110

VFP

Forward

recovery voltage

Tj = 25°C

IF =5A dIF/dt = 100 A/µs

2.4

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum

Unit

Rth (j-c)

Junction to case

TO-220AB / I

2PAK / D2PAK

/ DPAK

Per diode

4.0

°C/W

Per device

2.5

TO-220FPAB

Per diode

6.5

Per device

Rth (j-c)

Coupling

TO-220AB / I

2PAK / D2PAK / DPAK

1.0

°C/W

TO-220FPAB

3.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

THERMAL PARAMETERS

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