10N65F datasheet(1/8 Pages) SUNMATE

Nome de Peças	10N65F

Descrição Electrónicos	N-CHANNEL POWER MOSFET

PDF	8 Pages

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Fabricante Electrônico	SUNMATE [SUNMATE electronic Co., LTD]

Página de início	http://www.sunmate.tw/

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1. Gate

2. Drain

3. Source

Pin Definition:

●

RDS(ON)<1Ω @ VGS=10V

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Block Diagram

Ordering Information

● Case: TO-220,ITO-220 Package

D

G

S

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

ID

10

A

Pulsed Drain Current (Note 2)

IDM

38

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

608

mJ

Power Dissipation

TO-220/TO-262/TO-263

PD

156

W

ITO-220

50

W

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

●

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

Part No.

Package

Packing

TO-220

50pcs / Tube

ITO-220

50pcs / Tube

TO-262

50pcs / Tube

TO-263

50pcs / Tube

10N65 Series

N-CHANNEL POWER MOSFET

Features

Mechanical Data

10N65T

10N65F

10N65G

10N65K

Maximum Ratings TA = 25°C unless otherwise specified

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