Description
The AP10N65F/P is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.

General Features
VDS = 650V ID =10A
RDS(ON) < 0.9Ω @ VGS=10V Type 0.75Ω

Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)