10N65F datasheet(2/8 Pages) SUNMATE

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/ITO-220

TO-262/TO-263

θJA

62.5

°C/W

Junction to Case

TO-220

θJC

0.85

°C/W

ITO-220

2.6

PARAMETER

SYMBOL

TEST CONDITIONS

TYP

MIN

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

V =0V, ID=250μA

650

Drain-Source Leakage Current

IDSS

Gate- Source Leakage Current

Forward

IGSS

VG=30V, VDS=0V

100 nA

Reverse

VGS=-30V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

V =VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

0.88 1.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0 MHz

1200

Output Capacitance

COSS

166

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS=0V, IS=10A,

dIF/dt =100 A/μs (Note 1)

570

Reverse Recovery Charge

QRR

μC

4.7

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

VDD =325V, ID =10A,

RG =25Ω (Note 1, 2)

VDS=520V, ID=10A,

VGS=10V (Note 1, 2)

VDS=650V, VGS=0V

µA

S=10V, ID=5A

V =0 V, IS =10A

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