NE416 Folha de dados, PDF

índice	NE416(1) Resultado Recomendado.
Corresponde a, parecido com	NE416(1)
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Fabricante Electrônico

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NEC	NE416	579Kb/13P	NPN MEDIUM POWER UHF-VHF TRANSISTOR

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NEC	NE41137	208Kb/2P	N-CHANNEL GAASDUAL-GATE MESFET
NEC	NE4210M01	79Kb/12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE4210M01	193Kb/14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1998
NEC	NE4210M01-T1	79Kb/12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE4210M01-T1	193Kb/14P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1998
NEC	NE4210S01	65Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE4210S01	252Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE4210S01	199Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
NEC	NE4210S01-T1	65Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE4210S01-T1	252Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE4210S01-T1	199Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
NEC	NE4210S01-T1B	65Kb/16P	X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE4210S01-T1B	252Kb/7P	SUPER LOW NOISE HJ FET
Renesas Technology Corp	NE4210S01-T1B	199Kb/18P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1999
	NE4211M01	206Kb/10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2003
	NE4211M01-T1	206Kb/10P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 2003
NEC	NE42484A	72Kb/2P	NONLINEAR MODEL
Renesas Technology Corp	NE42484A	189Kb/12P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE42484A-SL	189Kb/12P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991
	NE42484A-T1	189Kb/12P	HETERO JUNCTION FIELD EFFECT TRANSISTOR 1991

NE416 Folha de dados, PDF

NE416 Datasheet ,PDF

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