GTVA212701FA-V2-R2 Folha de dados, PDF

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cree, Inc	GTVA212701FA-V2-R0	434Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
WOLFSPEED, INC.	GTVA212701FA-V2-R0	566Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
Cree, Inc	GTVA212701FA	434Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
WOLFSPEED, INC.	GTVA212701FA	566Kb/8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
Infineon Technologies A...	GTVA220701FA	862Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-08-18
Cree, Inc	GTVA220701FA	581Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
WOLFSPEED, INC.	GTVA220701FA	736Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTVA220701FA-V1-R0	736Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
	GTVA220701FA-V1-R2	736Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
Infineon Technologies A...	GTVA220701FA	862Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-08-18
WOLFSPEED, INC.	GTVA220701FA_V1	736Kb/9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz Rev. 05.1, 2022-1-27
Infineon Technologies A...	GTVA221701FA	616Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-07-27
	GTVA221701FA	616Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-07-27
	GTVA261701FA	858Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29
Cree, Inc	GTVA261701FA	591Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA	750Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA261701FA-V1	750Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA261701FA-V1-R0	750Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA261701FA-V1-R2	750Kb/10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
Infineon Technologies A...	GTVA261701FA	858Kb/4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29

GTVA212701FA-V2-R2 Folha de dados, PDF

GTVA212701FA-V2-R2 Datasheet ,PDF

Ligação URL