GTVA261701FA-V1-R2 Folha de dados(PDF) - WOLFSPEED, INC.

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GTVA261701FA-V1-R2 Folha de dados (PDF) - WOLFSPEED, INC.

GTVA261701FA-V1-R2 Datasheet PDF - WOLFSPEED, INC.


Nome de Peças	GTVA261701FA-V1-R2

Download	GTVA261701FA-V1-R2 Download

Tamanho do Arquivo	750.06 Kbytes

página	10 Pages

Fabricante Electrônico	WOLFSPEED [WOLFSPEED, INC.]

Página de início	https://www.wolfspeed.com/

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Descrição Electrónicos

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

GTVA261701FA-V1-R2 Datasheet (PDF)

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GTVA261701FA-V1-R2 Datasheet PDF - WOLFSPEED, INC.


Nome de Peças	GTVA261701FA-V1-R2

Download	GTVA261701FA-V1-R2 Click to download

Tamanho do Arquivo	750.06 Kbytes

página	10 Pages

Fabricante Electrônico	WOLFSPEED [WOLFSPEED, INC.]

Página de início	https://www.wolfspeed.com/

Logo

Descrição Electrónicos	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

GTVA261701FA-V1-R2 Folha de dados (HTML) - WOLFSPEED, INC.

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GTVA261701FA-V1-R2 Detalhes do produto

Description
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input Matched
• Typical CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 75%
- Gain = 15 dB
• Human Body Model, Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 40 W (CW)
output power
• RoHS-compliant

Nº de peça semelhante - GTVA261701FA-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
Infineon Technologies A...	GTVA261701FA	858Kb / 4P	Thermally-Enhanced High Power RF GaN HEMT Rev. 01, 2015-05-29

Descrição semelhante - GTVA261701FA-V1-R2

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

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