| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
 Guangdong Youtai Semico... |
1084S2-1.5
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-1.5TR
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-1.8
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-1.8TR
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-2.5
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-2.5TR
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-3.3
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-3.3TR
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-5.0
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-5.0TR
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-ADJ
|
1Mb/11P
|
5A LDO regulator circuit
|
|
1084S2-ADJTR
|
1Mb/11P
|
5A LDO regulator circuit
|
 OEN India Limited |
27P-084S-XXX
|
372Kb/1P
|
SLIDE & PIANO TYPE DIP SWITCHES
|
|
27S-084S-XXX
|
372Kb/1P
|
SLIDE & PIANO TYPE DIP SWITCHES
|
 Infineon Technologies A... |
2ED21084S06J
|
1Mb/25P
|
650 V half bridge gate driver with integrated bootstrap diode
V 2.22 2020-07-02
|
|
2ED21084S06J
|
1Mb/26P
|
650 V half bridge gate driver with integrated bootstrap diode
V 2.22 2020-07-02
|
|
2ED21084S06J
|
1Mb/26P
|
650 V half bridge gate driver with integrated bootstrap diode
V 2.22 2020-07-02
|
|
2ED21084S06J
|
1Mb/24P
|
650 V high-side and low-side gate driver with integrated bootstrap diode
V 2.22 2020-07-02
|
 Renesas Technology Corp |
2SK2084STL-E
|
88Kb/8P
|
Silicon N Channel MOS FET
|
 Ashcroft, Inc. |
301084S02L
|
1Mb/2P
|
1084 Test Gauge
RevC_12-02-22
|