Description
The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Features
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
• Negative VS transient immunity of 100 V
• Floating channel designed for bootstrap operation
• Operating voltages (VS node) upto + 650 V
• Maximum bootstrap voltage (VB node) of + 675 V
• Integrated ultra-fast, low resistance bootstrap diode
• Logic operational up to –11 V on VS Pin
• Negative voltage tolerance on inputs of –5 V
• Independent under voltage lockout for both channels
• Schmitt trigger inputs with hysteresis
• 3.3 V, 5 V and 15 V input logic compatible
• Maximum supply voltage of 25 V
• Dual package options of DSO-8 and DSO-14
• High and low voltage pins separated for maximum creepage and
   clearance (2ED21064S06J version)
• Separate logic and power ground with the 2ED21064S06J version
• RoHS compliant