STPS1H100 datasheet(3/7 Pages) STMICROELECTRONICS

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STPS1H100

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Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values) (SMA)

Figure 6: Non repetitive surge peak forward

current versus overload duration (maximum

values) (SMB)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration

(epoxy

printed

circuit

board,

e(Cu)=35µm, recommended pad layout) (SMA)

Figure

Relative

variation

thermal

impedance junction to ambient versus pulse

duration

(epoxy

printed

circuit

board,

e(Cu)=35µm, recommended pad layout) (SMB)

Figure 9: Reverse leakage current versus

reverse voltage applied (typical values)

Figure

10:

Junction

capacitance

versus

reverse voltage applied (typical values)

1E-3

1E-2

1E-1

1E+0

I (A)

δ=0.5

T =25°C

T =75°C

T =110°C

t(s)

1E-3

1E-2

1E-1

1E+0

I (A)

δ=0.5

T =25°C

T =75°C

T =110°C

t(s)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

102030405060708090

100

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

2E+2

I (µA)

V (V)

T =125°C

T =25°C

100

C(pF)

V (V)

F=1MHz

T =25°C

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