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2SD667A Folha de dados(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Nome de Peças 2SD667A
Descrição Electrónicos  Silicon NPN transistor in a TO-92LM Plastic Package
PDF  6 Pages
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Fabricante Electrônico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de início  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SD667A Folha de dados(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  2SD667A Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SD667A Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SD667A Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SD667A Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SD667A Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. 2SD667A Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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2SD667(A)
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
2SD667
80
V
2SD667A
100
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
1.0
A
Collector Current (Pulse)
ICP
2.0
A
Collector Power Dissipation
PC
900
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base
Breakdown Voltage
VCBO
IC=10μA
IE=0
120
V
Collector to Emitter
Breakdown Voltage
VCEO
2SD667
IC=1.0mA
IB=0
80
V
2SD667A
100
Emitter to Base Breakdown
Voltage
VEBO
IE=10μA
IC=0
5.0
V
Collector Cut-Off Current
ICBO
VCB=100V
IE=0
10
μA
DC Current Gain
hFE(1)
VCE=5.0V
IC=150mA
60
320
hFE(2)
VCE=5.0V
IC=500mA
30
Collector to Emitter
Saturation Voltage
VCE(sat)
IC=500mA
IB=50mA
1.0
V
Base to Emitter Saturation
Voltage
VBE
VCE=5.0V
IC=150mA
1.5
V
Transition Frequency
fT
VCE=5.0V
IC=150mA
140
MHz
Collector Output
Capacitance
Cob
VCB=10V
IE=0
f=1.0MHz
12
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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