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AS8C803601 Folha de dados(PDF) 9 Page - Alliance Semiconductor Corporation

Nome de Peças AS8C803601
Descrição Electrónicos  Three chip enables for simple depth expansion
PDF  21 Pages
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Fabricante Electrônico  ALSC [Alliance Semiconductor Corporation]
Página de início  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS8C803601 Folha de dados(HTML) 9 Page - Alliance Semiconductor Corporation

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99AS8C803601, AS8C801801, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
ZBT™
Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
Commercial Temperatur e Range
9
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE1 = L, CE2 = L and CE 2 = H. CE = H is defined as CE1 = H, CE2 = H or CE 2 = L.
Read Operation(1)
Device Operation - Showing Mixed Load, Burst,
Deselect and NOOP Cycles(2)
NOTES:
1. CE = L is defined as CE1 = L, CE2 = L and CE 2 = H. CE = H is defined as CE1 = H, CE2 = H or CE 2 = L.
2. H = High; L = Low; X = Don’t Care; Z = High Impedance.
CycleAddressR/W
ADV/LD
CE(1)
CEN
BW
x
OE
I/O
Comments
nA0
H
L
L
L
X
X
X
Load read
n+1
X
X
H
X
L
X
X
X
Burst read
n+2
A1
HL
L
L
X
L
Q0
Load read
n+3
X
X
L
H
L
X
L
Q0+1 Deselect or STOP
n+4
X
X
H
XL
XL
Q1
NOOP
n+5
A2
H
L
L
L
X
X
Z
Load read
n+6
X
X
H
X
L
X
X
Z
Burst read
n+7
X
X
L
H
L
X
L
Q2
Deselect or STOP
n+8
A3
L
L
LLLL
Q2+1 Load write
n+9
X
X
H
X
L
L
X
Z
Burst write
n+10
A4
L
L
LLL
X
D3
Load write
n+11
X
X
L
H
L
X
X
D3+1 Deselect or STOP
n+12
X
X
H
X
L
X
X
D4
NOOP
n+13
A5
L
L
L
L
L
X
Z
Load write
n+14
A6
H
L
L
L
X
X
Z
Load read
n+15
A7
L
L
LLL
X
D5
Load write
n+16
X
X
H
X
L
L
L
Q6
Burst write
n+17
A8
HL
L
L
X
X
D7
Load read
n+18
X
X
H
X
L
X
X
D7+1 Burst read
n+19
A9
L
L
LLLL
Q8
Load write
5304tbl 12
CycleAddressR/W
ADV/LD
CE(2)
CEN
BW
x
OE
I/O
Comments
nA0
H
L
L
L
X
X
X
Address and Control meet setup
n+1
X
X
X
X
L
XXX
Clock
S
S
etup
V
alid
n+2
X
X
X
XXX
L
Q0
Contents of Address A0 Re ad Out



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