AS4C4M16S datasheet(9/53 Pages) ALSC

Nome de Peças	AS4C4M16S

Descrição Electrónicos	Fully synchronous operation

PDF	53 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ALSC [Alliance Semiconductor Corporation]

Página de início	https://www.alliancememory.com

Logo

9 / 53 page

NOP

FEBRUARY 2011

AS4C4M16S

CLK

DQM

COMMAND

BANKA

ACTIVATE

NOP

READ A

WRITE A

NOP

CAS# latency=2

tCK2, DQ

Must be Hi-Z before

the Write Command

DIN A0

DIN A1

DIN A2

DIN A3

Figure 6. Read to Write Interval (Burst Length ≥ 4, CAS# Latency = 2)

CLK

DQM

COMMAND

NOP

READ A

NOP

WRITE B

NOP

CAS# latency=3

tCK3, DQ

DOUT A0

DIN B0

DIN B1

DIN B2

Must be Hi-Z before

the Write Command

Don’t Care

Figure 7. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3)

CLK

DQM

COMMAND

NOP

READ A

NOP

WRITE B

NOP

CAS# latency=2

DIN B0

DIN B1

DIN B2

DIN B3

tCK2, DQ

Must be Hi-Z before

the Write Command

Don’t Care

Figure 8. Read to Write Interval (Burst Length ≥ 4, CAS# Latency = 2)

A read burst without the auto precharge function may be interrupted by a BankPrecharge/ Precharge All

command to the same bank. The following figure shows the optimum time that BankPrecharge/ Precharge All

command is issued in different CAS# latency.

Rev2.0 May 2014

AS4C4M16S Folha de dados(PDF) 9 Page - Alliance Semiconductor Corporation

AS4C4M16S Folha de dados(HTML) 9 Page - Alliance Semiconductor Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

Folha de dados Download

Ligação URL