AS4C4M16S datasheet(2/53 Pages) ALSC

2 / 53 page

AS4C4M16S

- 6/7

tCK3 Clock Cycle time(min.)

6/7ns

tAC3 Access time from CLK(max.)

5.4/5.4ns

tRAS Row Active time(min.)

42/49 ns

tRC Row Cycle time(min.)

60/63 ns

Part Number

Frequency

Package

AS4C4M16S-6TCN

166MHz

TSOP II

AS4C4M16S-6TIN

166MHz

TSOP II

AS4C4M16S-7TCN

143MHz

TSOP II

FEBRUARY 2011

AS4C4M16S

64Mb / 4M x 16 bit Synchronous DRAM (SDRAM)

Alliance Memory

Rev2.0 May 2014

Features

• Fast access time from clock: 5.4/5.4 ns

• Fast clock rate: 166/143 MHz

• Fully synchronous operation

• Internal pipelined architecture

• 1M word x 16-bit x 4-bank

• Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

• Auto Refresh and Self Refresh

• 4096 refresh cycles/64ms

• CKE power down mode

• Single +3.3V ± 0.3V power supply

• Interface: LVTTL

• 54-pin 400 mil plastic TSOP II package

- Pb free and Halogen free

Table1. Key Specifications

Table 2. Ordering Information

T: indicates TSOPII Package,

N: indicates Pb and Halogen Free for TSOPII Package

Figure 1.Pin Assignment (Top View)

Overview

The AS4C4M16S SDRAM is a high-speed CMOS

synchronous

DRAM containing 64 Mbits. It is

internally configured as 4 Banks of 1M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses st art at a selected

location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command.

The AS4C4M16S provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

VDD

LDQM

WE#

CAS#

RAS#

CS#

BA0

BA1

A10/AP

VDD

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

VSS

NC/RFU

UDQM

CLK

CKE

A11

VSS

* Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)

Rev2.0 May 2014

AS4C4M16S Folha de dados(PDF) 2 Page - Alliance Semiconductor Corporation

AS4C4M16S Folha de dados(HTML) 2 Page - Alliance Semiconductor Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

Folha de dados Download

Ligação URL