STM8L151F2 datasheet(80/122 Pages) STMICROELECTRONICS

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Electrical parameters

STM8L151x2, STM8L151x3

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DocID018780 Rev 9

Table 37. I/O static characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

VIL

Input low level voltage(2)

Input voltage on true open-drain

pins (PC0 and PC1)

VSS-0.3

0.3 x VDD

Input voltage on any other pin

VSS-0.3

0.3 x VDD

VIH

Input high level voltage (2)

Input voltage on true open-drain

pins (PC0 and PC1)

with VDD < 2 V

0.70 x VDD

-5.2

Input voltage on true open-drain

pins (PC0 and PC1)

with VDD ≥ 2 V

-5.5

Input voltage on any other pin

0.70 x VDD

VDD+0.3

Vhys

Schmitt trigger voltage

hysteresis (3)

I/Os

200

True open drain I/Os

200

Ilkg

Input leakage current (4)

VSS≤VIN≤VDD

High sink I/Os

50 (5)

VSS≤VIN≤VDD

True open drain I/Os

200(5)

VSS≤VIN≤VDD

PA0 with high sink LED driver

capability

200(5)

RPU

Weak pull-up equivalent

resistor(2)(6)

VIN=VSS

CIO

I/O pin capacitance

1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.

2. Guaranteed by characterization results.

3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Not tested in production.

6. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics described in

Figure 23).

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