STP130N6F7 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STP130N6F7

4/12

DocID027410 Rev 3

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 60 V

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 40 A

4.2

5.0

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

2600

Coss

Output capacitance

1200

Crss

Reverse transfer

capacitance

115

Total gate charge

VDD = 30 V, ID = 80 A, VGS = 10 V

(see Figure 14: "Gate charge test

circuit")

Qgs

Gate-source charge

13.6

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 40 A, RG = 4.7

Ω,

VGS = 10 V (see Figure 13:

"Switching times test circuit for

resistive load" and Figure 18:

"Switching time waveform")

Rise time

td(off)

Turn-off delay time

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on voltage

VGS = 0 V, ISD = 80 A

1.2

trr

Reverse recovery

time

ISD = 80 A, di/dt = 100 A/µs,

VDD = 48 V (see Figure 15: "Test

circuit for inductive load switching

and diode recovery times")

Qrr

Reverse recovery

charge

IRRM

Reverse recovery

current

2.2

Notes:

(1)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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