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STP130N6F7 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STP130N6F7
Descrição Electrónicos  High avalanche ruggedness
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP130N6F7 Folha de dados(HTML) 1 Page - STMicroelectronics

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July 2015
DocID027410 Rev 3
1/12
This is information on a product in full production.
www.st.com
STP130N6F7
N-
channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STP130N6F7
60 V
5.0 mΩ
80 A
160 W
•
Among the lowest RDS(on) on the market
•
Excellent figure of merit (FoM)
•
Low Crss/Ciss ratio for EMI immunity
•
High avalanche ruggedness
Applications
•
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packing
STP130N6F7
130N6F7
TO-220
Tube
AM01475v1_Tab
D(2, TAB)
G(1)
S(3)


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