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STGW60H65FB Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGW60H65FB
Descrição Electrónicos  Low thermal resistance
PDF  16 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65FB Folha de dados(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
April 2015
DocID025187 Rev 4
1/16
16
STGW60H65FB
STGWT60H65FB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, a slightly positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
TO-247
1
2
3
TO-3P
1
2
3
TAB
Table 1. Device summary
Order code
Marking
Package
Packing
STGW60H65FB
GW60H65FB
TO-247
Tube
STGWT60H65FB
GWT60H65FB
TO-3P
Tube
www.st.com


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