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STGW60H65FB Folha de dados(PDF) 8 Page - STMicroelectronics

Nome de Peças STGW60H65FB
Descrição Electrónicos  Low thermal resistance
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65FB Folha de dados(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGW60H65FB, STGWT60H65FB
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DocID025187 Rev 4
Figure 14. Switching loss vs gate resistance
Figure 15. Switching loss vs collector current
E(μJ)
2100
1300
500
2
RG(Ω)
610
2900
VCC = 400V, VGE = 15V
IC = 60A, TJ = 175 °C
14
18
EOFF
EON
GIPD280820131527FSR
E (μJ)
2000
1000
0
0
IC(A)
20
40
60
80
3000
4000
5000
6000
7000
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
100
EOFF
EON
GIPD280820131538FSR
Figure 16. Switching loss vs collector emitter
voltage
Figure 17. Switching times vs collector current
E (μJ)
2300
1300
300
150
VCE(V)
250
350
450
3300
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 60A
EOFF
EON
4300
GIPD280820131554FSR
t
(ns)
100
10
1
0
IC(A)
20
40
60
80
TJ= 175°C, VGE= 15V
Rg= 10Ω, VCC= 400V
100
tf
tdoff
tdon
tr
GIPD280820131613FSR
Figure 18. Switching times vs gate resistance
Figure 19. Capacitance variations
t
(ns)
100
10
Rg(Ω)
48
TJ= 175°C, VGE= 15V
IC= 60A, VCC= 400V
12
tf
tdoff
16
tdon
tr
20
GIPD280820131622FSR
C(pF)
1000
100
10
0.1
VCE(V)
110
10000
Cies
Coes
Cres
100
f = 1 MHz
GIPD280820131518FSR



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