EM357-RTR datasheet(15/241 Pages) SILABS

15 / 241 page

Rev 1.3

Table 2.6 lists the nRESET pin specifications for the EM35x. The digital I/O power (named VDD_PADS) comes

from three dedicated pins (pins 23, 28 and 37). The voltage applied to these pins sets the I/O voltage.

2.6. Non-RF System Electrical Characteristics

Table 2.7 lists the non-RF system level characteristics for the EM35x.

Table 2.6. nReset Pin Specifications

Parameter

Test Condition

Min

Typ

Max

Unit

Low Schmitt switching threshold

VSWIL

Schmitt input threshold going from

high to low

0.42 x

VDD_PADS

—

0.50 x

VDD_PADS

High Schmitt switching threshold

VSWIH

Schmitt input threshold going from

low to high

0.62 x

VDD_PADS

—

0.80 x

VDD_PADS

Input current for logic 0

IIL

—

–0.5

μA

Input current for logic 1

IIH

—

+0.5

μA

Input pull-up resistor value

RIPU

Pull-up value while the chip is not

reset



Input pull-up resistor value

RIPURESET

Pull-up value while the chip is

reset

14.5



Table 2.7. Non-RF System Electrical Characteristics

Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.

Parameter

Test Condition

Min

Typ

Max

Unit

System wake time from deep

sleep

From wakeup event to first ARM® Cor-

texTM-M3 instruction running from 6 MHz

internal RC clock

Includes supply ramp time and oscillator

startup time

—

110

—

µs

Shutdown time going into deep

sleep

From last ARM® CortexTM-M3 instruction

to deep sleep mode

—

µs

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