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STM32F303VC Folha de dados(PDF) 83 Page - STMicroelectronics

Nome de Peças STM32F303VC
Descrição Electrónicos  ARM®-based Cortex®-M4 32b MCUFPU, up to 256KB Flash 48KB SRAM, 4 ADCs, 2 DAC ch., 7 comp, 4 PGA, timers, 2.0-3.6 V
PDF  148 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F303VC Folha de dados(HTML) 83 Page - STMicroelectronics

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STM32F303xB STM32F303xC
Electrical characteristics
124
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114, ANSI/ESD STM5.3.1 standard.
Table 50. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/72 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP100 package
compliant with IEC
61967-2
0.1 to 30 MHz
7
dBµV
30 to 130 MHz
20
130 MHz to 1GHz
27
SAE EMI Level
4
-
Table 51. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Guaranteed by characterization results.
Unit
VESD(HBM)
Electrostatic
discharge voltage
(human body model)
TA = +25 °C, conforming
to JESD22-A114
22000
V
VESD(CDM)
Electrostatic
discharge voltage
(charge device model)
TA = +25 °C, conforming
to ANSI/ESD STM5.3.1
WLCSP100
package
3
250
Packages
except
WLCSP100
4
500



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