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MMBT3946DW Folha de dados(PDF) 2 Page - Yea Shin Technology Co., Ltd

Nome de Peças MMBT3946DW
Descrição Electrónicos  COMPLEMENTARY NPN/PNP TRANSISTOR
PDF  5 Pages
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Fabricante Electrônico  YEASHIN [Yea Shin Technology Co., Ltd]
Página de início  http://www.yeashin.com
Logo YEASHIN - Yea Shin Technology Co., Ltd

MMBT3946DW Folha de dados(HTML) 2 Page - Yea Shin Technology Co., Ltd

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REV.02 20120703
MMBT3946DW
DEVICE CHARACTERISTICS
MAXIMUM RATINGS(TA=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
PNP 3906 ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-0.05
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.05
μA
hFE(1)
VCE=-1V,IC=-0.1mA
60
hFE(2)
VCE=-1V,IC=-1mA
80
hFE(3)
VCE=-1V,IC=-10mA
100
300
hFE(4)
VCE=-1V,IC=-50mA
60
DC current gain
hFE(5)
VCE=-1V,IC=-100mA
30
VCE(sat)1
IC=-10mA,IB=-1mA
-0.25
V
Collector-emitter saturation voltage
VCE(sat)2
IC=-50mA,IB=-5mA
-0.4
V
VBE(sat)1
IC=-10mA,IB=-1mA
-0.65
-0.85
V
Base-emitter saturation voltage
VBE(sat)2
IC=-50mA,IB=-5mA
-0.95
V
Transition frequency
fT
VCE=-20V,IC=-10mA,f=100MHz
250
MHz
Collector output capacitance
Cob
VCB=-5V,IE=0,f=1MHz
4.5
pF
Noise figure
NF
VCE=-5V,Ic=-0.1mA,
f=1KHZ,Rg=1KΩ
4
dB
Delay time
td
35
nS
Rise time
tr
VCC=-3V, VBE=-0.5V
IC=-10mA , IB1=-IB2=-1mA
35
nS
Storage time
tS
225
nS
Fall time
tf
VCC=-3V, IC=-10mA
IB1=-IB2=- 1mA
75
nS



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