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STM32L052C8 Folha de dados(PDF) 84 Page - STMicroelectronics

Nome de Peças STM32L052C8
Descrição Electrónicos  Ultra-low-power 32-bit MCU ARM-based Cortex-M0, up to 64 KB Flash memory, 8 KB SRAM, 2 KB EEPROM, USB, ADC, DAC
PDF  136 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L052C8 Folha de dados(HTML) 84 Page - STMicroelectronics

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Electrical characteristics
STM32L052x6 STM32L052x8
84/136
DocID025936 Rev 6
6.3.11
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 56. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Guaranteed by characterization results.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C,
conforming to
ANSI/JEDEC JS-001
22000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA +25 °C,
conforming to
ANSI/ESD STM5.3.1.
C4
500
Table 57. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +125 °C conforming to JESD78A
II level A



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