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SS2FL4 Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SS2FL4 Folha de dados(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page ![]() SS2FL4 www.vishay.com Vishay General Semiconductor Revision: 01-Sep-16 1 Document Number: 87617 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Wave and reflow solderable • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. MECHANICAL DATA Case: DO-219AB (SMF) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end Note (1) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 40 V IFSM 50 A VF at IF = 2.0 A (TA = 125 °C) 0.43 V TJ max. 150 °C Package DO-219AB (SMF) Diode variations Single die Top view Bottom view DO-219AB (SMF) eSMP® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2FL4 UNIT Device marking code 2L4 Maximum repetitive peak reverse voltage VRRM 40 V Maximum average forward rectified current (fig. 1) IF(AV) (1) 2.0 A Non-repetitive peak forward surge current 8.3 ms single half sine-wave at TJ (init) = 25 °C IFSM 50 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
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