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BAS40T Folha de dados(PDF) 2 Page - Diode Semiconductor Korea |
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BAS40T Folha de dados(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page ![]() Surface Mount Schottky Barrier Diode BAS40T/-04T/-05T/-06T ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=10μA 40 V Leakage current IR VR=30V 200 nA Forward voltage VF IF=1.0mA,tp<300μS IF=40mA,tp<300μS 380 1000 mV Typical total capacitance CT VR=0V,f=1MHz 5.0 pF Reverse recovery Time trr IF=IR=10mA,Irr=0.1*IR,RL=100Ω 5.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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