MP4513 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

MP4513

2002-11-20

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance of junction to

ambient

(4 devices operation, Ta = 25°C)

ΣRth (j-a)

°C/W

Thermal resistance of junction to case

(4 devices operation, Tc = 25°C)

ΣRth (j-c)

5.0

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

260

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0 A

―

µA

Collector cut-off current

ICEO

VCE = 100 V, IB = 0 A

―

µA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0 A

0.3

―

2.0

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0 A

100

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 30 mA, IB = 0 A

100

―

hFE (1)

VCE = 3 V, IC = 0.5 A

1000

―

DC current gain

hFE (2)

VCE = 3 V, IC = 3 A

1000

―

Collector-emitter

VCE (sat)

IC = 3 A, IB = 12 mA

―

2.0

Saturation voltage

Base-emitter

VBE (sat)

IC = 3 A, IB = 12 mA

―

2.5

Transition frequency

VCE = 3 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.5

―

Storage time

tstg

―

4.0

―

Switching time

Fall time

IB1 = −IB2 = 12 mA, duty cycle ≤ 1%

―

2.5

―

µs

Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward current

IFM

―

Surge current

IFSM

t = 1 s, 1 shot

―

Forward voltage

IF = 1 A, IB = 0 A

―

1.1

1.8

Reverse recovery time

trr

―

3.0

―

µs

Reverse recovery charge

Qrr

IF = 5 A, VBE = −3 V, dIF/dt = −50 A/µs

―

µC

20 µs

VCC = 30 V

Output

IB2

IB1

Input

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