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MP4513 Folha de dados(PDF) 5 Page - Toshiba Semiconductor

Nome de Peças MP4513
Descrição Electrónicos  TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
PDF  6 Pages
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Fabricante Electrônico  TOSHIBA [Toshiba Semiconductor]
Página de início  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4513 Folha de dados(HTML) 5 Page - Toshiba Semiconductor

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MP4513
2002-11-20
5
Collector-emitter voltage VCE (V)
Safe Operating Area
rth – tw
Pulse width tw (s)
Ambient temperature Ta (°C)
PT – Ta
Total power dissipation PT (W)
∆Tj – PT
0.1
1
0.05
0.03
0.3
0.5
1
3
5
10
3
10
30
100
300
20
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
100 µs*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0
8
40
2
4
6
80
120
160
200
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
(4)
(3)
(2)
(1)
Circuit board
0.001
0.01
0.1
1
10
100
1000
0.3
(3)
(2)
(1)
1
3
10
30
100
300
(4)
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
50
5
Curves should be applied in thermal
limited area.
(single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
Circuit board
2
4
6
8
0
160
40
80
120
10
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
(1)
(2) (3) (4)
Circuit board
Attached on a circuit board



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