MRF9100 datasheet(2/12 Pages) MOTOROLA

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MRF9100 MRF9100R3 MRF9100SR3

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

µAdc

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 500 µAdc)

VGS(th)

—

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 800 mAdc)

VGS(Q)

—

Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

—

0.19

0.5

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

gfs

—

DYNAMIC CHARACTERISTICS (1)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.0

—

FUNCTIONAL TESTS (In Motorola Test Fixture)

Output Power, 1 dB Compression Point, CW

(VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz)

P1dB

100

110

—

Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

Gps

—

Drain Efficiency

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f = 960 MHz)

—

Input Return Loss

(VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA,

f1 = 921 MHz and 960 MHz,

f2 = 940 MHz)

IRL

—

–20

–10

—

Third Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA,

f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz)

IMD

—

–30

—

dBc

Output Mismatch Stress

(VDD = 26 Vdc, IDQ = 800 mA, Pout = 100 W CW,

f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of

Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

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