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MRF9100 MRF9100R3 MRF9100SR3

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 921 to 960 MHz, the high gain and broadband performance of these

devices make them ideal for large–signal, common source amplifier applica-

tions in 26 volt base station equipment.

• On–Die Integrated Input Match

• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts

Output Power, P1dB — 110 Watts (Typ)

Power Gain @ P1dB — 16.5 dB (Typ)

Efficiency @ P1dB — 53% (Typ)

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,

100 Watts (CW) Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

65

Vdc

Gate–Source Voltage

+15, –0.5

Vdc

Derate above 25

°C

175

1.0

Watts

W/

°C

Storage Temperature Range

–65 to +200

°C

Operating Junction Temperature

200

°C

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C7 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.0

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF9100/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF9100

MRF9100R3

MRF9100SR3

GSM/EDGE 900 MHz, 110 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETs

CASE 465–06, STYLE 1

(NI–780)

(MRF9100)

CASE 465A–06, STYLE 1

(NI–780S)

(MRF9100SR3)

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