CT2N7002E-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 3

Proprietary & Confidential

Page 3

Jun, 2015

CT2N7002E-R3

N-Channel Enhancement MOSFET

Electrical Characteristics TA = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= 250µA

IDSS

Drain-Source Leakage Current

VDS = 60V, VGS = 0V

µ A

IGSS

Gate-Source Leakage Current

VGS = ±16V, VDS = 0V

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = 10V, ID = 500mA

4.15

7.5

VGS = 5.0V, ID = 500mA

4.7

7.5

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID =250µA

1.0

2.0

3.0

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = 25V ,

VGS = 0V,

f=1MHz

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = 15V , VGS = 10V,

RG = 25 ,

ID =500mA

1.4

Rise Time

16.3

TD(OFF)

Turn-Off Delay Time

4.4

Fall Time

Total Gate Charge

VDS = 15V , VGS = 5V,

ID = 500mA

0.06

QGS

Gate-Source Charge

0.43

QGD

Gate-Drain (Miller) Charge

0.12

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