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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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CT2N7002E-R3 Folha de dados(PDF) 1 Page - CT Micro International Corporation |
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CT2N7002E-R3 Folha de dados(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 1 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 4.15 Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7 Ω, at VGS= 5.0V, IDS= 500mA • Continuous Drain Current at TA=25℃,ID = 500mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Cellular phone • Notebook • Power management Description The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Gate Source Drain Gate Drain Source |
Nº de peça semelhante - CT2N7002E-R3 |
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Descrição semelhante - CT2N7002E-R3 |
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