BCW61D datasheet(2/2 Pages) DIOTEC

2 / 2 page

3) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

4) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCW 61

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

- I

C = 10 mA, - IB = 0.25 mA

- V

BEsat

600 mV

–

850 mV

- I

C = 50 mA, - IB = 1.25 mA

- V

BEsat

700 mV

–

1050 mV

DC current gain – Kollektor-Basis-Stromverhältnis 3)

- V

CE = 5 V, - IC = 10

BCW 61B

–

BCW 61C

–

BCW 61D

100

–

- V

CE = 5 V, - IC = 2 mA

BCW 61B

180

–

310

BCW 61C

250

–

460

BCW 61D

380

–

630

- V

CE = 1 V, - IC = 50 mA

BCW 61B

–

BCW 61C

–

BCW 61D

100

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

- V

CE = 5 V, - IC = 10

:A- V

BEon

–

550 mV

–

- V

CE = 5 V, - IC = 2 mA

- V

BEon

600 mV

650 mV

750 mV

- V

CE = 1 V, - IC = 50 mA

- V

BEon

–

720 mV

–

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

4.5 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

EB = 0.5 V, IC = ic = 0, f = 1 MHz

EB0

–

11 pF

–

Noise figure – Rauschzahl

- V

CE = 5 V, - IC = 200

:A, R

G = 2 k

f = 1 kHz,

)f = 200 Hz

–

2 dB

6 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 4)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BCW 60 series

Marking – Stempelung

BCW 61B = BB

BCW 61C = BC

BCW 61D = BD

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