BC808 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BC 807 / BC 808

Characteristics, T

j = 25

Kennwerte, T

j = 25

Min.

Typ.

Max.

Collector saturation voltage – Kollektor-Sättigungsspg.

- I

C = 500 mA, - IB = 50 mA

- V

CEsat

–

0.7 V

Base saturation voltage – Basis-Sättigungsspannung

- I

C = 500 mA, - IB = 50 mA

- V

BEsat

–

1.3 V

Base-Emitter voltage – Basis-Emitter-Spannung

- V

CE = 1 V, - IC = 500 mA

- V

–

1.2 V

Collector-Base cutoff current – Kollektorreststrom

E = 0, - VCB = 20 V

- I

CB0

–

100 nA

E = 0, - VCB = 20 V, Tj = 150

/C- I

CB0

––

Emitter-Base cutoff current – Emitterreststrom

C = 0, - VEB = 4 V

- I

EB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 50 MHz

80 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

12 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

320 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC 817 / BC 818

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 807-16 = 5A BC 807-25 = 5B BC 807-40 = 5C

BC 807 = 5D

BC 808-16 = 5E BC 808-25 = 5F

BC 808-40 = 5G

BC 808 = 5H

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