STP43N60DM2 datasheet(5/13 Pages) STMICROELECTRONICS

Nome de Peças	STP43N60DM2

Descrição Electrónicos	Extremely high dv/dt ruggedness

PDF	13 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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5 / 13 page

STP43N60DM2

Electrical characteristics

DocID026790 Rev 5

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

136

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 34 A

1.6

trr

Reverse recovery

time

ISD = 34 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

120

Qrr

Reverse recovery

charge

0.6

µC

IRRM

Reverse recovery

current

10.4

trr

Reverse recovery

time

ISD = 34 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

240

Qrr

Reverse recovery

charge

2.4

µC

IRRM

Reverse recovery

current

20.5

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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