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STP43N60DM2 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STP43N60DM2
Descrição Electrónicos  Extremely high dv/dt ruggedness
PDF  13 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP43N60DM2 Folha de dados(HTML) 1 Page - STMicroelectronics

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July 2015
DocID026790 Rev 5
1/13
This is information on a product in full production.
www.st.com
STP43N60DM2
N-channel 600 V, 0.085
Ω typ., 34 A MDmesh™ DM2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @
TJmax.
RDS(on)
max.
ID
PTOT
STP43N60DM2
650 V
0.093 Ω
34 A
250 W
•
Fast-recovery body diode
•
Extremely low gate charge and input
capacitance
•
Low on-resistance
•
100% avalanche tested
•
Extremely high dv/dt ruggedness
•
Zener-protected
Applications
•
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STP43N60DM2
43N60DM2
TO-220
Tube


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