ISO5451DW datasheet(28/38 Pages) TI

Nome de Peças	ISO5451DW

Descrição Electrónicos	High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

PDF	38 Pages

Scroll/Zoom	100%

Fabricante Electrônico	TI [Texas Instruments]

Página de início	http://www.ti.com

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28 / 38 page

DESAT

GND2

VCC2

15V

1 F

DDST

VEE2

220

CLAMP

1, 8

15V

1 F

OUT

ISO5451

NŸ

ISO5451

SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015

www.ti.com

10.2.2.11 Higher Output Current Using an External Current Buffer

To increase the IGBT gate drive current, a non-inverting current buffer (such as the npn/pnp buffer shown in

Figure 50) may be used. Inverting types are not compatible with the desaturation fault protection circuitry and

must be avoided. The MJD44H11/MJD45H11 pair is appropriate for currents up to 8 A, the D44VH10/ D45VH10

pair for up to 15 A maximum.

Figure 50. Current Buffer for Increased Drive Current

10.2.3 Application Curve

CL = 1 nF

RG = 10 Ω

CL = 1 nF

RG = 10 Ω

VCC2 - VEE2 = VCC2 - GND2 = 20 V

VCC2 - GND2 = 15 V

GND2 - VEE2 = 8 V

(VCC2 - VEE2 = 23 V)

Figure 52. Normal Operation - Unipolar Supply

Figure 51. Normal Operation - Bipolar Supply

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