www.irf.com

3

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

IRHN7450SE

IRHN7450SE

IRHN7450SE

IRHN7450SE

IRHN7450SE

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Fig a.

Fig a.

Fig a.

Fig a.

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

Parameter

Parameter

Parameter

Parameter

100K Rads (Si)

Units

Units

Units

Units

Units

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Min

Min

Min

Min

Min

Max

Max

Max

Max

Max

Drain-to-Source Breakdown Voltage

500

—

V

Gate Threshold Voltage

2.0

4.5

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

50

µA

Static Drain-to-Source#$

On-State Resistance (TO-3)

—

0.51

Ω

Static Drain-to-Source#$

On-State Resistance (SMD-1)

—

0.51

Ω

Diode Forward Voltage#$

—

1.6

V

Ion

Ion

Ion

Ion

Ion

LET

LET

LET

LET

LET

Energy

Range

Energy

Range

Energy

Range

Energy

Range

Energy

Range

V

VV

V

V

,5

,5

,5

,5

(V)

(V)

(V)

(V)

MeV/(mg/cm ))

(MeV)

(µm)

@V

@V

@V

@V

@V

/5

/5

/5

/5

=0V @V

=0V @V

=0V @V

=0V @V

/5

/5

/5

/5

=-5V @V

=-5V @V

=-5V @V

=-5V @V

/5

/5

/5

/5

=-10V @V

=-10V @V

=-10V @V

=-10V @V

/5

/5

/5

/5

=-15V @V

=-15V @V

=-15V @V

=-15V @V

/5

/5

/5

/5

=-20V

=-20V

=-20V

=-20V

Cu

28

285

43

375

375

375

375

375

Br

36.8

305

39

350

350

350

325

300

Ni

26.6

265

42

—

375

—

—

—

0

100

200

300

400

0

-5

-10

-15

-20

VGS

Cu

Br

Ni