IRHN7450SE

IRHN7450SE

IRHN7450SE

IRHN7450SE

IRHN7450SE

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

Pre-Irradiation

2

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Electrical Characteristics

Electrical Characteristics

Electrical Characteristics

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Parameter

Parameter

Parameter

Parameter

Min

Min

Min

Min

Min

Typ

Typ

Typ

Typ

Typ Max

Max

Max

Max

Max Units

Units

Units

Units

Units

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

500

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

0.6

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.51

VGS = 12V, ID = 7.0A

Resistance

—

—

0.57

VGS = 12V, ID = 12A

VGS(th)

Gate Threshold Voltage

2.5

—

4.5

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

3.0

—

—

S ( )VDS > 15V, IDS = 7.0A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

50

VDS= 400V ,VGS=0V

—

—

250

VDS = 400V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

140

VGS =12V, ID = 12A

Qgs

Gate-to-Source Charge

—

—

35

nC

VDS = 250V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

75

Turn-On Delay Time

—

—

35

VDD =250V, ID =12A,

tr

Rise Time

—

—

60

VGS =12V, RG = 2.35Ω

Turn-Off Delay Time

—

—

75

tf

Fall Time

—

—

60

LS + LD

Total Inductance

—

4.0

—

Ciss

Input Capacitance

—

2800

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

640

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

250

—

nA

➃

nH

ns

µA

Thermal Resistance

Thermal Resistance

Thermal Resistance

Thermal Resistance

Thermal Resistance

Parameter

Parameter

Parameter

Parameter

Parameter

Min

Min

Min

Min

Min Typ

Typ

Typ

Typ

Typ Max

Max

Max

Max

Max Units

Units

Units

Units

Units

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Test Conditions

RthJC

Junction-to-Case

—

—

0.83

RthJ-PCB

Junction-to-PC board

—

6.6

—

Soldered to a 1 inch square clad PC board

°C/W

Measured from the center of drain

pad to center of source pad

Source-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

Parameter

Parameter

Parameter

Parameter

Parameter

Min

Min

Min

Min

Min Typ

Typ

Typ

Typ

Typ Max

Max

Max

Max

Max Units

Units

Units

Units

Units

Test Conditions

Test Conditions

Test Conditions

Test Conditions

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

12

ISM

Pulse Source Current (Body Diode) ➀

——

48

VSD Diode Forward Voltage

—

—

1.6

V

trr

Reverse Recovery Time

—

—

500

nS

Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

9.6

µCVDD ≤ 50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Ω