CMPT5087E datasheet(1/2 Pages) CENTRAL

Nome de Peças	CMPT5087E

Descrição Electrónicos	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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Fabricante Electrônico	CENTRAL [Central Semiconductor Corp]

Página de início	http://www.centralsemi.com

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CMPT5087E PNP

CMPT5088E NPN

ENHANCED SPECIFICATION

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5087E

and CMPT5088E, are Silicon transistors in an epoxy

molded surface mount package with enhanced

specifications designed for applications requiring high

gain and low noise.

MARKING CODES: CMPT5087E: C2QE

CMPT5088E: C1QE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN PNP

MAX

UNITS

ICBO

VCB=20V

50

nA

IEBO

VEB=3.0V

50

nA

BVCBO

IC=100µA

50

135

150

V

BVCEO

IC=1.0mA

50

65

105

V

BVEBO

IE=100µA

5.0

8.7

7.5

V

VCE(SAT)

IC=10mA, IB=1.0mA

45

50

100

mV

VCE(SAT)

IC=100mA, IB=10mA

110

225

400

mV

VBE(SAT)

IC=10mA, IB=1.0mA

700

800

mV

hFE

VCE=5.0V, IC=0.1mA

300

430

390

900

hFE

VCE=5.0V, IC=1.0mA

300

435

380

hFE

VCE=5.0V, IC=10mA

300

430

350

hFE

VCE=5.0V, IC=100mA

50

125

75

fT

VCE=5.0V, IC=500µA, f=20MHz

100

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

15

pF

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

350

1400

NF

VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz

3.0

dB

♦ Enhanced specification

♦♦ Additional Enhanced specification

♦

♦♦

♦

SOT-23 CASE

R1 (1-February 2010)

www.centra lsemi.com

Nº de peça semelhante - CMPT5087E

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