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STM8362 Folha de dados(PDF) 3 Page - SamHop Microelectronics Corp.

Nome de Peças STM8362
Descrição Electrónicos  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8362 Folha de dados(HTML) 3 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
IGSS
±100
nA
VGS(th)
-1.4
V
30
gFS
18
S
VSD
CISS
1000
pF
COSS
123
pF
CRSS
107
pF
Qg
18
nC
22
nC
Qgs
65
nC
Qgd
20
tD(ON)
22
ns
tr
2.1
ns
tD(OFF)
6
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-5.5A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-5.8A
VDS=-5V , ID=-5.8A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-250uA
VDS=-32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-3
VGS=-4.5V , ID=-4.6A
38
45
60
m ohm
c
f=1.0MHz
c
VDS=-20V,ID=-5.5A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-2.0A
-0.81
-1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
_
_
STM8362
www.samhop.com.tw
Nov,12,2009
3
nC
VDS=-20V,ID=-5.5A,VGS=-4.5V
10.7
_
-2.0
b
IS
Maximum Continuous Drain-Source Diode Forward Current
A
-2.0
Ver 1.1



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